Performance of semi-insulating metal-semiconductor-metal GaN prototype devices as ionizing radiation detector

Metal-semiconductor-metal ultraviolet photodetector based on GaN

A metal-semiconductor-metal (MSM) ultraviolet photodetector has been fabricated using unintentionally doped n-GaN films grown on sapphire substrates. Its dark current, photocurrent under the illumination with λ = 360 nm light, responsivity, and the dependence of responsivity on bias voltage were measured at room temperature. The dark current of the photodetector is 1.03 nA under 5 V bias, and i...

Carbon Nanotube “T Junctions”: Nanoscale Metal-Semiconductor-Metal Contact Devices

Stable “T junctions” of single-walled carbon nanotubes forming one of the smallest prototypes of microscopic metal-semiconductor-metal contacts are proposed. The structures have been found to be local minima of the total energy on relaxation with a generalized tight-binding molecular dynamics scheme. These quasi-2D junctions could be the building blocks of nanoscale tunnel junctions in a 2D net...

Influence of Ionizing Radiation and Hot Carrier Injection on Metal-Oxide- Semiconductor Transistors

Favourable characteristics of silicon dioxide (further referred to as oxide or SiO2) as an almost irreplaceable dielectric in MOS (Metal-Oxide-Semiconductor) components have contributed to a considerable extent to the great success of the technology of manufacturing integrated circuits during the last decades. However, it has been proved that instabilities of electric charge in the gate oxide a...

Highly doped thin-channel GaN-metal–semiconductor field-effect transistors

We report on the influence of the channel doping on dc, high frequency, and noise performance of GaN metal–semiconductor field-effect transistors ~MESFETs! grown on sapphire substrates. The devices with the channel thicknesses from 50 to 70 nm and doping levels up to 1.5310 cm were investigated. An increase in the channel doping results in the improved dc characteristics, higher cutoff, and max...

Si3N4/AlGaN/GaN-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors